wpt2n32 single, pnp, -30v, -1a, power transistor with 20v n-mosfet descriptions the wpt2n32 is pnp bipolar power transistor with 20v n-mosfet. this device is suitable for use in charging circuit and other power management. standard product wpt2n32 is pb-free. features ? ultra low collector-to-e mitter saturation voltage ? high dc current gain >100 ? 1a continue collector current ? small package dfn2x2-6l applications ? charging circuit ? other power management in portable equipments dfn2x2-6l pin configuration (top view) 2n32 yyww 2n32 = device code yy = year ww = week marking order information device package shipping WPT2N32-6/tr dfn2x2-6l 3000/reel&tape e b c g d s 1 2 3 4 5 6 12 6 5 3 4 c d 1 of 7 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
absolute maximum ratings thermal resistance ratings a surface mounted on fr-4 board using 1 square inch pad size, 1oz copper b surface mounted on fr-4 board usi ng minimum pad size, 1oz copper c pulse width=300s, duty cycle<2% d maximum junction temperature t j =150c. parameter symbol value unit pnp transistor collector-emitter voltage v ceo -30 v collector-base voltage v cbo -30 v emitter-base voltage v ebo -6 v continues collector current b i c - 1 a pulse collector current c i cm -3 a n-mosfet drain-source voltage v ds 20 v gate-source voltage v gs 6 v continuous drain current a i d 0.80 a continuous drain current b 0.69 a pulsed drain current c i dm 1.4 a power dissipation and temperature power dissipation a p d 1.1 w power dissipation b 0.6 w junction temperature t j 150 c lead temperature t l 260 c operation temperature t a -40 ~ 85 c storage temperature range t stg -55 to 150 c parameter symbol value unit junction-to-ambient thermal resistance a r ja 113 c/w junction-to-ambient thermal resistance b r ja 208 c/w wpt2n32 2 of 7 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
electronics characteristics (ta=25 o c, unless otherwise noted) parameter symbol test conditions min. typ. max. unit pnp transistor collector-emitter breakdown voltage bv ceo i c =-10ma, i b =0ma -32 v collector-base breakdown voltage bv cbo i c =-1ma, i e =0ma -32 v emitter-base breakdown voltage bv ebo i e =-100ua, i c =0ma -6 v collector cutoff current i cbo v cb =-30v,i e =0 -100 na emitter cutoff current i ebo v eb =-5v,i c =0 -100 na collector-emitter satu ration voltage v ce(sat) i c =-0.5a, i b =-50ma -0.1 -0.35 v base-emitter satura tion voltage v be(sat) i c =-0.5a, i b =-50ma -0.9 -1.5 v base-emitter forward voltage v be(on) i c =-0.5a, v ce =-2v -0.7 -1.1 v dc current gain h fe i c =-0.5a ,v ce =-2v 100 300 n-mosfet drain-source breakdown voltage v( br ) dss v gs =0v, i d =250ua 20 v zero gate voltage drain current i dss v ds =16v, v gs =0v 100 na gate ?source leakage current i gss v ds =0v, v gs =5v 1 ua gate threshold voltage v gs(th) v ds = v gs , i d =250ua 0.44 0.55 0.86 v drain-source on-resistance r ds(on) v gs =4.5v, i d =0.55a 205 600 m ? v gs =2.5v, i d =0.50a 295 650 m ? v gs =1.8v, i d =0.35a 320 700 m ? input capacitance ciss v ds =10v, v gs =0v, f=1 00khz 61 pf output capacitance coss 17 pf reverse transfer capacitance crss 10 pf total gate charge q g(tot) v ds =10v, v gs =4.5v, i d =0.6a 1.15 nc threshold gate charge q g(th) 0.06 nc gate-source charge q gs 0.15 nc gate-drain charge q gd 0.23 nc turn-on delay time td(on) v dd =10v, v gs =4.5v, i d =0.5a, r l =10 ? , r g =6 ? 33 ns turn-on rise time tr 102 ns turn-off delay time td(off) 790 ns turn-off fall time tf 439 ns body diode forward voltage v sd v gs =0v, i s =0.35a 0.5 0.7 1.1 v wpt2n32 3 of 7 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
typical characteristics (ta=25 o c, unless otherwise noted) pnp transistor output characteristics dc current gain power derating transfer characteristics c-e saturation voltage vs. collector current safe operating area 0 25 50 75 100 125 150 0 20 40 60 80 100 % of rated power or i pp ambient temperature( o c) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 -5ma -10ma -20ma -30ma -40ma -50ma i c -collector current(a) v ce -collector to emitter voltage(v) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1e-3 0.01 0.1 1 10 v ce =-2v ta=-45 o c ta=25 o c i c -collector current(a) v be -base to emitter voltage(v) ta=85 o c 1e-3 0.01 0.1 1 10 1 10 100 1000 ta=25 o c ta=-45 o c v ce(sat) -collector saturation voltage(v) i c -collector current(a) ta=85 o c 1e-3 0.01 0.1 1 10 5 50 500 5000 ta=-45 o c ta=25 o c ta=85 o c h fe -dc current gain i c -collector current(a) 10 0.01 0.1 1.0 10 100 0.1 1.0 100 s 1 ms 10 ms 100 ms 1 s dc single pulse t a = 25 c x rthja collector to emitter voltage: v ce (v) collector current: i c (a) wpt2n32 4 of 7 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
n-mosfet output characteristics on resistance vs. drain current on resistance vs. junction temperature transfer characteristics on resistance vs. gate-to-source voltage threshold voltage vs. temperature 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 v gs =4.5v v gs =3.5v v gs =2.5v v gs =2.0v v gs =1.5v i ds -drain to source current(a) v ds -drain to source voltage(v) 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 0.0 0.5 1.0 1.5 2.0 2.5 3.0 t=125 o c t=25 o c t=-50 o c i ds -drain source current(a) v gs -gate to source voltage(v) 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 100 150 200 250 300 350 400 v gs =4.5v v gs =2.5v v gs =1.8v r ds(on) -on resistance(m ? ) i ds -drain to source current(a) 1.01.52.02.53.03.54.04.5 100 150 200 250 300 350 400 450 500 550 600 i d =0.55a r ds(on) -on resistance(m ? ) v gs -gate to source voltage(v) -50 -25 0 25 50 75 100 125 150 0 50 100 150 200 250 300 350 400 v gs =4.5v,i d =0.55a r ds(on) -on resistance(m ? ) temperature( o c) -50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 i d =250ua v gs(th) -gate threshold voltage(v) temperature( o c) wpt2n32 5 of 7 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
cap acitance body diode char acteristi cs safe operation area transient thermal response (junction-to-ambient) 012345678910 0 10 20 30 40 50 60 70 80 crss coss ciss v gs =0v,f=100 k hz c - capacit a nce (pf) vds-drain t o source voltage(v) 0.0 0.1 0. 2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 t=25 o c i sd -source to dra i n current(a) v sd -source to drai n vo ltage(v) t=150 o c v ds - drain-to-source voltage (v) 10 0.1 0.1 1 10 100 0.001 1 - drain current (a) i d 0.01 t a = 25 c single pulse 10 ms 100 ms dc 1 s 10 s limited by r ds(on) 10 -4 10 -3 10 -2 10 -1 600 100 10 1 square wave pulse duration (s) normalized transient thermal impedance z 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty = 0.5 1. duty cycle, d = 2. r thja = 113 c/w 3. t jm - t a = p cm x z thja t 1 t 2 t 1 t 2 4. surface mounted p cm thja x rthja wpt2n32 6 of 7 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
package outline dimensions dfn2x2-6l symbol dimension in millimeters min. typ. max. a 0.700 0.750 0.800 a1 0.000 0.025 0.050 a3 0.203ref d 1.900 2.000 2.100 e 1.900 2.000 2.100 e1 0.750 0.800 0.850 d1 0.600 0.650 0.700 k 0.200min b 0.250 0.300 0.350 e 0.650typ l 0.250 0.300 0.350 wpt2n32 7 of 7 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
|
